35 results found
Jeffrey Johnson Essex Junction, VT
Professions & Specialties
Collector • Repossessor • Collections Specialist
Experience & Education
| United States Patent | Inventor | Appl. No. | Assignee |
|---|---|---|---|
|
#6506656 Jan 14, 2003 Filed: Mar 19, 2001 |
Gregory G. Freeman (Hopewell Junction, NY) Basanth Jagannathan (Stormville, NY) Shwu-Jen Jeng (Wappingers Falls, NY) Jeffrey B. Johnson (Essex Junction, VT) | 09/811859 |
International Business Machines Corporation (Armonk, NY) |
| International Classification: | H01L 21331 | 438309, 438370 |
Patent:
Stepped collector implant and method for fabrication
Abstract:
The present invention provides a unique device structure and method that provides increased...
Claim:
What is claimed is: 1. A method for forming a transistor, the method comprising the steps of: a)...
David Harame Essex Junction, VT
Professions & Specialties
Collector • Repossessor • Collections Specialist
Experience & Education
| United States Patent | Inventor | Appl. No. | Assignee |
|---|---|---|---|
|
#2013021 Aug 22, 2013 Filed: Feb 21, 2012 |
James W. Adkisson (Jericho, VT) David L. Harame (Essex Junction, VT) Qizhi Liu (Lexington, MA) | 13/401064 |
International Business Machines Corporation (Armonk, NY) |
| International Classification: | H01L 29/737, H01L 21/331 | 257 51, 438318, 257E29188, 257E21371 |
Patent:
TRANSISTOR HAVING A NARROW IN-SUBSTRATE COLLECTOR REGION FOR REDUCED BASE-COLLECTOR JUNCTION...
Abstract:
Disclosed are a transistor (e.g., bipolar junction transistor (BJT) or a heterojunction bipolar...
Andreas Stricker Essex Junction, VT
Professions & Specialties
Collector • Repossessor • Collections Specialist
Experience & Education
| United States Patent | Inventor | Appl. No. | Assignee |
|---|---|---|---|
|
#7170083 Jan 30, 2007 Filed: Jan 7, 2005 |
Gregory G. Freeman (Hopewell Junction, NY) Marwan H. Khater (Poughkeepsie, NY) Rajendran Krishnasamy (Essex Junction, VT) Kathryn T. Schonenberg (Wappinger Falls, NY) Andreas D Stricker (Essex Junction, VT) | 10/905510 |
International Business Machines Corporation (Armonk, NY) |
| International Classification: | H01L 29/06 | 257 12, 438637, 257 79 |
Patent:
Bipolar transistor with collector having an epitaxial Si:C region
Abstract:
A structure and method where C is incorporated into the collector region of a heterojunction...
Rajendran Krishnasamy Essex Junction, VT
Professions & Specialties
Collector • Repossessor • Collections Specialist
Experience & Education
| United States Patent | Inventor | Appl. No. | Assignee |
|---|---|---|---|
|
#7170083 Jan 30, 2007 Filed: Jan 7, 2005 |
Gregory G. Freeman (Hopewell Junction, NY) Marwan H. Khater (Poughkeepsie, NY) Rajendran Krishnasamy (Essex Junction, VT) Kathryn T. Schonenberg (Wappinger Falls, NY) Andreas D Stricker (Essex Junction, VT) | 10/905510 |
International Business Machines Corporation (Armonk, NY) |
| International Classification: | H01L 29/06 | 257 12, 438637, 257 79 |
Patent:
Bipolar transistor with collector having an epitaxial Si:C region
Abstract:
A structure and method where C is incorporated into the collector region of a heterojunction...
William Tonti Essex Junction, VT
Professions & Specialties
Collector • Repossessor • Collections Specialist
Experience & Education
| United States Patent | Inventor | Appl. No. | Assignee |
|---|---|---|---|
|
#7425754 Sep 16, 2008 Filed: Feb 25, 2004 |
Hiroyuki Akatsu (Yorktown Heights, NY) Rama Divakaruni (Ossining, NY) Gregory G. Freeman (Hopewell Junction, NY) David R. Greenberg (White Plains, NY) Marwan H. Khater (Poughkeepsie, NY) William R. Tonti (Essex Junction, VT) | 10/708340 |
International Business Machines Corporation (Armonk, NY) |
| International Classification: | H01L 27/102 | 257565, 257197, 257571, 257E21608, 257E21696, 257E27055 |
Patent:
Structure and method of self-aligned bipolar transistor having tapered collector
Abstract:
A bipolar transistor is provided which includes a tapered, i. e. frustum-shaped, collector pedestal ...
Andreas Stricker Essex Junction, VT
Professions & Specialties
Collector • Repossessor • Collections Specialist
Experience & Education
| United States Patent | Inventor | Appl. No. | Assignee |
|---|---|---|---|
|
#7442595 Oct 28, 2008 Filed: Aug 28, 2006 |
Gregory G. Freeman (Hopewell Junction, NY) Marwan H. Khater (Poughkeepsie, NY) Rajendran Krishnasamy (Essex Junction, NY) Kathryn T. Schonenberg (Wappingers Falls, NY) Andreas D. Stricker (Essex Junction, VT) | 11/511047 |
International Business Machines Corporation (Armonk, NY) |
| International Classification: | H01L 21/337 | 438189, 257E27053 |
Patent:
Bipolar transistor with collector having an epitaxial Si:C region
Abstract:
A structure and method where C is incorporated into the collector region of a heterojunction...
David Harame Essex Junction, VT
Professions & Specialties
Collector • Repossessor • Collections Specialist
Experience & Education
| United States Patent | Inventor | Appl. No. | Assignee |
|---|---|---|---|
|
#8610174 Dec 17, 2013 Filed: Nov 30, 2011 |
James W. Adkisson (Jericho, VT) John J. Ellis-Monaghan (Grand Isle, VT) David L. Harame (Essex Junction, VT) Qizhi Liu (Lexington, MA) John J. Pekarik (Underhill, VT) | 13/307412 |
International Business Machines Corporation (Armonk, NY) |
| International Classification: | H01L 31/109 | 257197, 257198, 257565, 257575, 257E29171 |
Patent:
Bipolar transistor with a raised collector pedestal for reduced capacitance
Abstract:
Disclosed is a transistor with a raised collector pedestal in reduced dimension for reduced...
David Harame Essex Junction, VT
Professions & Specialties
Collector • Repossessor • Collections Specialist
Experience & Education
| United States Patent | Inventor | Appl. No. | Assignee |
|---|---|---|---|
|
#8546230 Oct 1, 2013 Filed: Nov 15, 2011 |
James W. Adkisson (Jericho, VT) David L. Harame (Essex Junction, VT) Robert K. Leidy (Burlington, VT) Qizhi Liu (Lexington, MA) | 13/296496 |
International Business Machines Corporation (Armonk, NY) |
| International Classification: | H01L 21/331, H01L 29/66 | 438349, 257592 |
Patent:
Bipolar transistor with a collector having a protected outer edge portion for reduced...
Abstract:
Disclosed are embodiments of a transistor (e. g. , bipolar junction transistor (BJT) or a...
Qizhi Liu Essex Junction, VT
Professions & Specialties
Collector • Repossessor • Collections Specialist
Experience & Education
| United States Patent | Inventor | Appl. No. | Assignee |
|---|---|---|---|
|
#7491985 Feb 17, 2009 Filed: Nov 29, 2005 |
Peter J. Geiss (Underhill, VT) Peter B. Gray (Essex Junction, VT) Alvin J. Joseph (Williston, VT) Qizhi Liu (Essex Junction, VT) | 11/288843 |
International Business Machines Corporation (Armonk, NY) |
| International Classification: | H01L 31/072, H01L 31/109, H01L 31/0328, H01L 31/0336 | 257197, 257198 |
Patent:
Method of collector formation in BiCMOS technology
Abstract:
A heterobipolar transistor (HBT) for high-speed BiCMOS applications is provided in which the...
William Tonti Essex Junction, VT
Professions & Specialties
Collector • Repossessor • Collections Specialist
Experience & Education
| United States Patent | Inventor | Appl. No. | Assignee |
|---|---|---|---|
|
#7615457 Nov 10, 2009 Filed: Jul 25, 2008 |
Hiroyuki Akatsu (Yorktown Heights, NY) Rama Divakaruni (Ossining, NY) Gregory G. Freeman (Hopewell Junction, NY) David R. Greenberg (White Plains, NY) Marwan H. Khater (Poughkeepsie, NY) William R. Tonti (Essex Junction, VT) | 12/220521 |
International Business Machines Corporation (Armonk, NY) |
| International Classification: | H01L 21/265, H01L 27/102 | 438366, 438320, 438341, 438350, 257 49, 257197, 257649, 257E21696, 257E27055 |
Patent:
Method of fabricating self-aligned bipolar transistor having tapered collector
Abstract:
A method is provided for making a bipolar transistor which includes a tapered, i. e....
Peter Gray Essex Junction, VT
Professions & Specialties
Collector • Repossessor • Collections Specialist
Experience & Education
| United States Patent | Inventor | Appl. No. | Assignee |
|---|---|---|---|
|
#7491985 Feb 17, 2009 Filed: Nov 29, 2005 |
Peter J. Geiss (Underhill, VT) Peter B. Gray (Essex Junction, VT) Alvin J. Joseph (Williston, VT) Qizhi Liu (Essex Junction, VT) | 11/288843 |
International Business Machines Corporation (Armonk, NY) |
| International Classification: | H01L 31/072, H01L 31/109, H01L 31/0328, H01L 31/0336 | 257197, 257198 |
Patent:
Method of collector formation in BiCMOS technology
Abstract:
A heterobipolar transistor (HBT) for high-speed BiCMOS applications is provided in which the...
Peter Gray Essex Junction, VT
Professions & Specialties
Collector • Repossessor • Collections Specialist
Experience & Education
| United States Patent | Inventor | Appl. No. | Assignee |
|---|---|---|---|
|
#7002190 Feb 21, 2006 Filed: Sep 21, 2004 |
Peter J. Geiss (Underhill, VT) Peter B. Gray (Essex Junction, VT) Alvin J. Joseph (Williston, VT) Qizhi Liu (Essex Junction, VT) | 10/711479 |
International Business Machines Corporation (Armonk, NY) |
| International Classification: | H01L 31/072, H01L 31/109, H01L 31/0328, H01L 31/0336 | 257197, 257198 |
Patent:
Method of collector formation in BiCMOS technology
Abstract:
A heterobipolar transistor (HBT) for high-speed BiCMOS applications is provided in which the...
Qizhi Liu Essex Junction, VT
Professions & Specialties
Collector • Repossessor • Collections Specialist
Experience & Education
| United States Patent | Inventor | Appl. No. | Assignee |
|---|---|---|---|
|
#7002190 Feb 21, 2006 Filed: Sep 21, 2004 |
Peter J. Geiss (Underhill, VT) Peter B. Gray (Essex Junction, VT) Alvin J. Joseph (Williston, VT) Qizhi Liu (Essex Junction, VT) | 10/711479 |
International Business Machines Corporation (Armonk, NY) |
| International Classification: | H01L 31/072, H01L 31/109, H01L 31/0328, H01L 31/0336 | 257197, 257198 |
Patent:
Method of collector formation in BiCMOS technology
Abstract:
A heterobipolar transistor (HBT) for high-speed BiCMOS applications is provided in which the...
Mankoo Lee Essex Junction, VT
Professions & Specialties
Repossessor • Collections Specialist • Emergency Medical Services Director • Emergency Medical Service Coordinator • Emergency Medical Care
Experience & Education
| United States Patent | Inventor | Appl. No. | Assignee |
|---|---|---|---|
|
#6396107 May 28, 2002 Filed: Nov 20, 2000 |
Ciaran J. Brennan (Essex Junction, VT) Douglas B. Hershberger (Essex Junction, VT) Mankoo Lee (Essex Junction, VT) Nicholas T. Schmidt (Colchester, VT) Steven H. Voldman (South Burlington, VT) | 09/716749 |
International Business Machines Corporation (Armonk, NY) |
| International Classification: | H01L 2362 | 257362, 257197 |
Patent:
Trench-defined silicon germanium ESD diode network
Abstract:
A silicon-germanium ESD element comprises a substrate of a first dopant type coupled to a first...
Claim:
Thus, having described the invention, what is claimed is: 1. A silicon-germanium ESD element...
Douglas Hershberger Essex Junction, VT
Professions & Specialties
Repossessor • Collections Specialist • Emergency Medical Services Director • Emergency Medical Service Coordinator • Emergency Medical Care
Experience & Education
| United States Patent | Inventor | Appl. No. | Assignee |
|---|---|---|---|
|
#6396107 May 28, 2002 Filed: Nov 20, 2000 |
Ciaran J. Brennan (Essex Junction, VT) Douglas B. Hershberger (Essex Junction, VT) Mankoo Lee (Essex Junction, VT) Nicholas T. Schmidt (Colchester, VT) Steven H. Voldman (South Burlington, VT) | 09/716749 |
International Business Machines Corporation (Armonk, NY) |
| International Classification: | H01L 2362 | 257362, 257197 |
Patent:
Trench-defined silicon germanium ESD diode network
Abstract:
A silicon-germanium ESD element comprises a substrate of a first dopant type coupled to a first...
Claim:
Thus, having described the invention, what is claimed is: 1. A silicon-germanium ESD element...
Ciaran Brennan Essex Junction, VT
Professions & Specialties
Repossessor • Collections Specialist • Emergency Medical Services Director • Emergency Medical Service Coordinator • Emergency Medical Care
Experience & Education
| United States Patent | Inventor | Appl. No. | Assignee |
|---|---|---|---|
|
#6396107 May 28, 2002 Filed: Nov 20, 2000 |
Ciaran J. Brennan (Essex Junction, VT) Douglas B. Hershberger (Essex Junction, VT) Mankoo Lee (Essex Junction, VT) Nicholas T. Schmidt (Colchester, VT) Steven H. Voldman (South Burlington, VT) | 09/716749 |
International Business Machines Corporation (Armonk, NY) |
| International Classification: | H01L 2362 | 257362, 257197 |
Patent:
Trench-defined silicon germanium ESD diode network
Abstract:
A silicon-germanium ESD element comprises a substrate of a first dopant type coupled to a first...
Claim:
Thus, having described the invention, what is claimed is: 1. A silicon-germanium ESD element...
William Tonti Essex Junction, VT
Professions & Specialties
Collector • Repossessor • Collections Specialist
Experience & Education
| United States Patent | Inventor | Appl. No. | Assignee |
|---|---|---|---|
|
#6492211 Dec 10, 2002 Filed: Sep 7, 2000 |
Ramachandra Divakaruni (Somers, NY) Russell J. Houghton (Essex Junction, VT) Jack A. Mandelman (Stormville, NY) W. David Pricer (Charlotte, VT) William R. Tonti (Essex Junction, VT) | 09/656819 |
International Business Machines Corporation (Armonk, NY) |
| International Classification: | H01L 2100 | 438155, 438234, 257349 |
Patent:
Method for novel SOI DRAM BICMOS NPN
Abstract:
There is disclosed herein a unique fabrication sequence and the structure of a vertical silicon on...
Claim:
We claim: 1. A method of simultaneously processing array and bipolar areas on a silicon on...
Russell Houghton Essex Junction, VT
Professions & Specialties
Collector • Repossessor • Collections Specialist
Experience & Education
| United States Patent | Inventor | Appl. No. | Assignee |
|---|---|---|---|
|
#6492211 Dec 10, 2002 Filed: Sep 7, 2000 |
Ramachandra Divakaruni (Somers, NY) Russell J. Houghton (Essex Junction, VT) Jack A. Mandelman (Stormville, NY) W. David Pricer (Charlotte, VT) William R. Tonti (Essex Junction, VT) | 09/656819 |
International Business Machines Corporation (Armonk, NY) |
| International Classification: | H01L 2100 | 438155, 438234, 257349 |
Patent:
Method for novel SOI DRAM BICMOS NPN
Abstract:
There is disclosed herein a unique fabrication sequence and the structure of a vertical silicon on...
Claim:
We claim: 1. A method of simultaneously processing array and bipolar areas on a silicon on...
Douglas Coolbaugh Essex Junction, VT
Professions & Specialties
Collector • Repossessor • Collections Specialist
Experience & Education
| United States Patent | Inventor | Appl. No. | Assignee |
|---|---|---|---|
|
#6674102 Jan 6, 2004 Filed: Jan 25, 2001 |
Douglas Duane Coolbaugh (Essex Junction, VT) Mark D. Dupuis (South Burilington, VT) Matthew D. Gallagher (Burlington, VT) Peter J. Geiss (Underhill, VT) Brett A. Philips (Fairfax, VT) | 09/769640 |
International Business Machines Corporation (Armonk, NY) |
| International Classification: | H01L 29737 | 257197, 257586, 257592, 257616 |
Patent:
Sti pull-down to control SiGe facet growth
Abstract:
A SiGe bipolar transistor including a semiconductor substrate having a collector and sub-collector...
Claim:
Having thus described our invention in detail, what we claim is new and desire to secure by the...
William Tonti Essex Junction, VT
Professions & Specialties
Collector • Repossessor • Collections Specialist
Experience & Education
| United States Patent | Inventor | Appl. No. | Assignee |
|---|---|---|---|
|
#6790722 Sep 14, 2004 Filed: Nov 22, 2000 |
Ramachandra Divakaruni (Somers, NY) Russell J. Houghton (Essex Junction, VT) Jack A. Mandelman (Stormville, NY) Wilbur D. Pricer (Charlotte, VT) William R. Tonti (Essex Junction, VT) | 09/718850 |
International Business Machines Corporation (Armonk, NY) |
| International Classification: | H01L 218238 | 438202, 438313, 438311, 438336, 438321, 438325, 438378 |
Patent:
Logic SOI structure, process and application for vertical bipolar transistor
Abstract:
A method and structure for forming an emitter in a vertical bipolar transistor includes providing a ...
Claim:
What is claimed is: 1. A method of forming an emitter in a vertical bipolar transistor comprising:...
Russell Houghton Essex Junction, VT
Professions & Specialties
Collector • Repossessor • Collections Specialist
Experience & Education
| United States Patent | Inventor | Appl. No. | Assignee |
|---|---|---|---|
|
#6790722 Sep 14, 2004 Filed: Nov 22, 2000 |
Ramachandra Divakaruni (Somers, NY) Russell J. Houghton (Essex Junction, VT) Jack A. Mandelman (Stormville, NY) Wilbur D. Pricer (Charlotte, VT) William R. Tonti (Essex Junction, VT) | 09/718850 |
International Business Machines Corporation (Armonk, NY) |
| International Classification: | H01L 218238 | 438202, 438313, 438311, 438336, 438321, 438325, 438378 |
Patent:
Logic SOI structure, process and application for vertical bipolar transistor
Abstract:
A method and structure for forming an emitter in a vertical bipolar transistor includes providing a ...
Claim:
What is claimed is: 1. A method of forming an emitter in a vertical bipolar transistor comprising:...
Jeffrey Johnson Essex Junction, VT
Professions & Specialties
Collector • Repossessor • Collections Specialist
Experience & Education
| United States Patent | Inventor | Appl. No. | Assignee |
|---|---|---|---|
|
#6521506 Feb 18, 2003 Filed: Dec 13, 2001 |
Douglas D. Coolbaugh (Essex Junction, VT) James S. Dunn (Jericho, VT) Michael D. Gordon (Essex Junction, VT) Mohamed Y. Hammad (Colchester, VT) Jeffrey B. Johnson (Essex Junction, VT) David C. Sheridan (South Burlington, VT) | 10/016539 |
International Business Machines Corporation (Armonk, NY) |
| International Classification: | H01L 2120 | 438379, 257596 |
Patent:
Varactors for CMOS and BiCMOS technologies
Abstract:
Varactors are provided which have a high tunability and/or a high quality factor associated...
Claim:
Having thus described our invention in detail, what we claim as new and secure by the Letters...
Douglas Coolbaugh Essex Junction, VT
Professions & Specialties
Collector • Repossessor • Collections Specialist
Experience & Education
| United States Patent | Inventor | Appl. No. | Assignee |
|---|---|---|---|
|
#6426265 Jul 30, 2002 Filed: Jan 30, 2001 |
Jack Oon Chu (Manhasset Hills, NY) Douglas Duane Coolbaugh (Essex Junction, VT) James Stuart Dunn (Jericho, VT) David R. Greenberg (White Plains, NY) David L. Harame (Essex Junction, VT) Basanth Jagannathan (Stormville, NY) Robb Allen Johnson (South Burlington, VT) Louis D. Lanzerotti (Burlington, VT) Kathryn Turner Schonenberg (New Fairfield, CT) Ryan Wayne Wuthrich (Burlington, VT) | 09/774126 |
International Business Machines Corporation (Armonk, NY) |
| International Classification: | H01L 21331 | 438312, 438357 |
Patent:
Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge...
Abstract:
A SiGe bipolar transistor containing substantially no dislocation defects present between the...
Claim:
Having thus described our invention in detail, what we claim is new and desire to secure by the...
Toshiharu Furukawa Essex Junction, VT
Professions & Specialties
Collector • Repossessor • Collections Specialist
Experience & Education
| United States Patent | Inventor | Appl. No. | Assignee |
|---|---|---|---|
|
#6531379 Mar 11, 2003 Filed: Apr 9, 2001 |
Toshiharu Furukawa (Essex Junction, VT) John Joseph Ellis-Monaghan (Grand Isle, VT) James Albert Slinkman (Montpelier, VT) | 09/829309 |
International Business Machines Corporation (Armonk, NY) |
| International Classification: | H01L 2122 | 438558, 257345, 257402, 257403, 438539, 438518, 438526, 438533, 438537 |
Patent:
High resolution dopant/impurity incorporation in semiconductors via a scanned atomic force probe
Abstract:
The present invention employs a scanned atomic force probe to physical incorporate impurity atoms...
Claim:
What is claimed is: 1. A heterojunction semiconductor structure comprising a semiconductor...
Douglass Coolbaugh Essex Junction, VT
Professions & Specialties
Collector • Repossessor • Collections Specialist
Experience & Education
| United States Patent | Inventor | Appl. No. | Assignee |
|---|---|---|---|
|
#6815802 Nov 9, 2004 Filed: Apr 15, 2002 |
Jack Oon Chu (Manhasset Hills, NY) Douglass Duane Coolbaugh (Essex Junction, VT) James Stuart Dunn (Jericho, VT) David R. Greenberg (White Plains, NY) David L. Harame (Essex Junction, VT) Basanth Jagannathan (Stormville, NY) Robb Allen Johnson (South Burlington, VT) Louis D. Lanzerotti (Burlington, VT) Kathryn Turner Schonenberg (New Fairfield, CT) Ryan Wayne Wuthrich (Burlington, VT) | 10/122857 |
International Business Machines Corporation (Armonk, NY) |
| International Classification: | H01L 27082 | 257592, 257 12, 257 19, 257 55, 257 63, 257565, 257616 |
Patent:
Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge...
Abstract:
A SiGe bipolar transistor containing substantially no dislocation defects present between the...
Claim:
Having thus described our invention in detail, what we claim is new and desire to secure by the...
David Harame Essex Junction, VT
Professions & Specialties
Collector • Repossessor • Collections Specialist
Experience & Education
| United States Patent | Inventor | Appl. No. | Assignee |
|---|---|---|---|
|
#6815802 Nov 9, 2004 Filed: Apr 15, 2002 |
Jack Oon Chu (Manhasset Hills, NY) Douglass Duane Coolbaugh (Essex Junction, VT) James Stuart Dunn (Jericho, VT) David R. Greenberg (White Plains, NY) David L. Harame (Essex Junction, VT) Basanth Jagannathan (Stormville, NY) Robb Allen Johnson (South Burlington, VT) Louis D. Lanzerotti (Burlington, VT) Kathryn Turner Schonenberg (New Fairfield, CT) Ryan Wayne Wuthrich (Burlington, VT) | 10/122857 |
International Business Machines Corporation (Armonk, NY) |
| International Classification: | H01L 27082 | 257592, 257 12, 257 19, 257 55, 257 63, 257565, 257616 |
Patent:
Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge...
Abstract:
A SiGe bipolar transistor containing substantially no dislocation defects present between the...
Claim:
Having thus described our invention in detail, what we claim is new and desire to secure by the...
David Harame Essex Junction, VT
Professions & Specialties
Collector • Repossessor • Collections Specialist
Experience & Education
| United States Patent | Inventor | Appl. No. | Assignee |
|---|---|---|---|
|
#6426265 Jul 30, 2002 Filed: Jan 30, 2001 |
Jack Oon Chu (Manhasset Hills, NY) Douglas Duane Coolbaugh (Essex Junction, VT) James Stuart Dunn (Jericho, VT) David R. Greenberg (White Plains, NY) David L. Harame (Essex Junction, VT) Basanth Jagannathan (Stormville, NY) Robb Allen Johnson (South Burlington, VT) Louis D. Lanzerotti (Burlington, VT) Kathryn Turner Schonenberg (New Fairfield, CT) Ryan Wayne Wuthrich (Burlington, VT) | 09/774126 |
International Business Machines Corporation (Armonk, NY) |
| International Classification: | H01L 21331 | 438312, 438357 |
Patent:
Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge...
Abstract:
A SiGe bipolar transistor containing substantially no dislocation defects present between the...
Claim:
Having thus described our invention in detail, what we claim is new and desire to secure by the...
Douglas Coolbaugh Essex Junction, VT
Professions & Specialties
Collector • Repossessor • Collections Specialist
Experience & Education
| United States Patent | Inventor | Appl. No. | Assignee |
|---|---|---|---|
|
#6521506 Feb 18, 2003 Filed: Dec 13, 2001 |
Douglas D. Coolbaugh (Essex Junction, VT) James S. Dunn (Jericho, VT) Michael D. Gordon (Essex Junction, VT) Mohamed Y. Hammad (Colchester, VT) Jeffrey B. Johnson (Essex Junction, VT) David C. Sheridan (South Burlington, VT) | 10/016539 |
International Business Machines Corporation (Armonk, NY) |
| International Classification: | H01L 2120 | 438379, 257596 |
Patent:
Varactors for CMOS and BiCMOS technologies
Abstract:
Varactors are provided which have a high tunability and/or a high quality factor associated...
Claim:
Having thus described our invention in detail, what we claim as new and secure by the Letters...
Douglas Coolbaugh Essex Junction, VT
Professions & Specialties
Collector • Repossessor • Collections Specialist
Experience & Education
| United States Patent | Inventor | Appl. No. | Assignee |
|---|---|---|---|
|
#6720590 Apr 13, 2004 Filed: Jan 8, 2003 |
Douglas D. Coolbaugh (Essex Junction, VT) Kathryn T. Schonenberg (New Fairfield, CT) | 10/338476 |
International Business Machines Corporation (Armonk, NY) |
| International Classification: | H01L 310328 | 257197, 257616 |
Patent:
C implants for improved SiGe bipolar yield
Abstract:
A method for improving the SiGe bipolar yield as well as fabricating a SiGe heterojunction bipolar...
Claim:
Having thus described our invention in detail, what we claim is new and desire to secure by the...
Ciaran Brennan Essex Junction, VT
Professions & Specialties
Collector • Repossessor • Collections Specialist
Experience & Education
| United States Patent | Inventor | Appl. No. | Assignee |
|---|---|---|---|
|
#6455919 Sep 24, 2002 Filed: Mar 19, 2001 |
Ciaran J. Brennan (Essex, VT) Steven H. Voldman (South Burlington, VT) | 09/811979 |
International Business Machines Corporation (Armonk, NY) |
| International Classification: | H01L 31117 | 257616, 257361, 257362, 257580, 257582 |
Patent:
Internally ballasted silicon germanium transistor
Abstract:
A bipolar transistor is disclosed. The bipolar transistor comprises: a silicon substrate; a...
Claim:
What is claimed is: 1. A bipolar transistor, comprising: a silicon substrate; a collector formed in ...
Michael Gordon Essex Junction, VT
Professions & Specialties
Collector • Repossessor • Collections Specialist
Experience & Education
| United States Patent | Inventor | Appl. No. | Assignee |
|---|---|---|---|
|
#6521506 Feb 18, 2003 Filed: Dec 13, 2001 |
Douglas D. Coolbaugh (Essex Junction, VT) James S. Dunn (Jericho, VT) Michael D. Gordon (Essex Junction, VT) Mohamed Y. Hammad (Colchester, VT) Jeffrey B. Johnson (Essex Junction, VT) David C. Sheridan (South Burlington, VT) | 10/016539 |
International Business Machines Corporation (Armonk, NY) |
| International Classification: | H01L 2120 | 438379, 257596 |
Patent:
Varactors for CMOS and BiCMOS technologies
Abstract:
Varactors are provided which have a high tunability and/or a high quality factor associated...
Claim:
Having thus described our invention in detail, what we claim as new and secure by the Letters...
Alan Botula Essex Junction, VT
Professions & Specialties
Collector • Repossessor • Collections Specialist
Experience & Education
| United States Patent | Inventor | Appl. No. | Assignee |
|---|---|---|---|
|
#6549061 Apr 15, 2003 Filed: Dec 20, 2001 |
Steven Howard Voldman (South Burlington, VT) Alan Bernard Botula (Essex Junction, VT) David TinSun Hui (Poughkeepsie, NY) | 10/026308 |
International Business Machines Corporation (Armonk, NY) |
| International Classification: | H03K 17615 | 327483, 327575, 327324 |
Patent:
Electrostatic discharge power clamp circuit
Abstract:
An ESD clamping circuit arranged in a darlington configuration and constructed from SiGe or similar ...
Claim:
What is claimed is: 1. An electrostatic discharge device comprising: a trigger transistor; a...
Douglas Coolbaugh Essex Junction, VT
Professions & Specialties
Collector • Repossessor • Collections Specialist
Experience & Education
| United States Patent | Inventor | Appl. No. | Assignee |
|---|---|---|---|
|
#6534371 Mar 18, 2003 Filed: Jun 11, 2001 |
Douglas D. Coolbaugh (Essex Junction, VT) Kathryn T. Schonenberg (New Fairfield, CT) | 09/878605 |
International Business Machines Corporation (Armonk, NY) |
| International Classification: | H01L 21331 | 438312, 438528, 257197 |
Patent:
C implants for improved SiGe bipolar yield
Abstract:
A method for improving the SiGe bipolar yield as well as fabricating a SiGe heterojunction bipolar...
Claim:
Having thus described our invention in detail, what we claim is new and desire to secure by the...
William Tonti Essex Junction, VT
Professions & Specialties
Collector • Repossessor • Collections Specialist
Experience & Education
| United States Patent | Inventor | Appl. No. | Assignee |
|---|---|---|---|
|
#6498518 Dec 24, 2002 Filed: Jul 14, 2000 |
Russell J. Houghton (Essex Junction, VT) Jack A. Mandelman (Stormville, NY) Azzouz Nezar (Shillington, PA) Wilbur D. Pricer (Charlotte, VT) William R. Tonti (Essex Junction, VT) | 09/617680 |
International Business Machines Corporation (Armonk, NY) |
| International Classification: | H03K 522 | 327 72, 327 74, 327 68, 327 77 |
Patent:
Low input impedance line/bus receiver
Abstract:
A current sensing circuit connected to a power supply terminal and having at least one input...
Claim:
What is claimed is: 1. A signal sensing circuit connected to a power supply terminal and having at...
Russell Houghton Essex Junction, VT
Professions & Specialties
Collector • Repossessor • Collections Specialist
Experience & Education
| United States Patent | Inventor | Appl. No. | Assignee |
|---|---|---|---|
|
#6498518 Dec 24, 2002 Filed: Jul 14, 2000 |
Russell J. Houghton (Essex Junction, VT) Jack A. Mandelman (Stormville, NY) Azzouz Nezar (Shillington, PA) Wilbur D. Pricer (Charlotte, VT) William R. Tonti (Essex Junction, VT) | 09/617680 |
International Business Machines Corporation (Armonk, NY) |
| International Classification: | H03K 522 | 327 72, 327 74, 327 68, 327 77 |
Patent:
Low input impedance line/bus receiver
Abstract:
A current sensing circuit connected to a power supply terminal and having at least one input...
Claim:
What is claimed is: 1. A signal sensing circuit connected to a power supply terminal and having at...