6 results found
Jeffrey Johnson Essex Junction, VT
Professions & Specialties
Tailor
Experience & Education
| United States Patent | Inventor | Appl. No. | Assignee |
|---|---|---|---|
|
#2013029 Nov 7, 2013 Filed: Jul 3, 2013 |
Roger W. Cheek (Somers, NY) Jeffrey B. Johnson (Essex Junction, VT) Chung H. Lam (Peekskill, NY) Beth A. Lawrence (Williston, VT) Michael J. Zierak (Colchester, VT) | 13/934625 | |
| International Classification: | H01L 29/66 | 438302 |
Patent:
METHOD TO TAILOR LOCATION OF PEAK ELECTRIC FIELD DIRECTLY UNDERNEATH AN EXTENSION SPACER FOR...
Abstract:
A method to enhance the programmability of a prompt-shift device is provided, which reduces the...
Jeffrey Johnson Essex Junction, VT
Professions & Specialties
Tailor
Experience & Education
| United States Patent | Inventor | Appl. No. | Assignee |
|---|---|---|---|
|
#2012018 Jul 19, 2012 Filed: Mar 26, 2012 |
Matthew J. Breitwisch (Yorktown Heights, NY) Roger W. Cheek (Somers, NY) Jeffrey B. Johnson (Essex Junction, VT) Chung H. Lam (Peekskill, NY) Beth A. Rainey (Williston, VT) Michael J. Zierak (Colchester, VT) | 13/430018 |
INTERNATIONAL BUSINESS MACHINES CORPORATION (Armonk, NY) |
| International Classification: | H01L 29/78 | 257408, 257E29266 |
Patent:
METHOD TO TAILOR LOCATION OF PEAK ELECTRIC FIELD DIRECTLY UNDERNEATH AN EXTENSION SPACER FOR...
Abstract:
A prompt-shift device having reduced programming time in the sub-millisecond range is provided. The ...
Jeffrey Johnson Essex Junction, VT
Professions & Specialties
Tailor
Experience & Education
| United States Patent | Inventor | Appl. No. | Assignee |
|---|---|---|---|
|
#2012018 Jul 19, 2012 Filed: Mar 26, 2012 |
Matthew J. Breitwisch (Yorktown Heights, NY) Roger W. Cheek (Somers, NY) Jeffrey B. Johnson (Essex Junction, VT) Chung H. Lam (Peekskill, NY) Beth A. Rainey (Williston, VT) Michael J. Zierak (Colchester, VT) | 13/429930 |
INTERNATIONAL BUSINESS MACHINES CORPORATION (Armonk, NY) |
| International Classification: | H01L 29/78 | 257408, 257E29266 |
Patent:
METHOD TO TAILOR LOCATION OF PEAK ELECTRIC FIELD DIRECTLY UNDERNEATH AN EXTENSION SPACER FOR...
Abstract:
A prompt-shift device having reduced programming time in the sub-millisecond range is provided. The ...
Jeffrey Johnson Essex Junction, VT
Professions & Specialties
Tailor
Experience & Education
| United States Patent | Inventor | Appl. No. | Assignee |
|---|---|---|---|
|
#8278197 Oct 2, 2012 Filed: May 30, 2008 |
Matthew J. Breitwisch (Yorktown Heights, NY) Roger W. Cheek (Somers, NY) Jeffrey B. Johnson (Essex Junction, VT) Chung H. Lam (Peekskill, NY) Beth A. Rainey (Williston, VT) Michael J. Zierak (Colchester, VT) | 12/130460 |
International Business Machines Corporation (Armonk, NY) |
| International Classification: | H01L 21/265 | 438519, 438510, 438514, 438527 |
Patent:
Method to tailor location of peak electric field directly underneath an extension spacer for...
Abstract:
The invention provides a method to enhance the programmability of a prompt-shift device, which...
James Quinlivan Essex Junction, VT
Professions & Specialties
Tailor
Experience & Education
| United States Patent | Inventor | Appl. No. | Assignee |
|---|---|---|---|
|
#6670263 Dec 30, 2003 Filed: Mar 10, 2001 |
Arne W. Ballantine (Round Lake, NY) Kevin K. Chan (Staten Island, NY) Jeffrey D. Gilbert (Burlington, VT) Kevin M. Houlihan (Boston, MA) Glen L. Miles (Essex Junction, VT) James J. Quinlivan (Essex Junction, VT) Samuel C. Ramac (Poughkeepsie, NY) Michael B. Rice (Colchester, VT) Beth A. Ward (Essex Junction, VT) | 09/802702 |
International Business Machines Corporation (Armonk, NY) |
| International Classification: | H01L 213205 | 438592, 438585, 438199, 438287, 438655 |
Patent:
Method of reducing polysilicon depletion in a polysilicon gate electrode by depositing polysilicon...
Abstract:
Polysilicon electrical depletion in a polysilicon gate electrode is reduced by depositing the...
Claim:
What is claimed is: 1. A CMOS transistor comprising a gate conductor formed on a gate dielectric,...
Glen Miles Essex Junction, VT
Professions & Specialties
Tailor
Experience & Education
| United States Patent | Inventor | Appl. No. | Assignee |
|---|---|---|---|
|
#6670263 Dec 30, 2003 Filed: Mar 10, 2001 |
Arne W. Ballantine (Round Lake, NY) Kevin K. Chan (Staten Island, NY) Jeffrey D. Gilbert (Burlington, VT) Kevin M. Houlihan (Boston, MA) Glen L. Miles (Essex Junction, VT) James J. Quinlivan (Essex Junction, VT) Samuel C. Ramac (Poughkeepsie, NY) Michael B. Rice (Colchester, VT) Beth A. Ward (Essex Junction, VT) | 09/802702 |
International Business Machines Corporation (Armonk, NY) |
| International Classification: | H01L 213205 | 438592, 438585, 438199, 438287, 438655 |
Patent:
Method of reducing polysilicon depletion in a polysilicon gate electrode by depositing polysilicon...
Abstract:
Polysilicon electrical depletion in a polysilicon gate electrode is reduced by depositing the...
Claim:
What is claimed is: 1. A CMOS transistor comprising a gate conductor formed on a gate dielectric,...